Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1976-12-02

1978-10-31

Esposito, Michael F.

Coating processes

Electrical product produced

Condenser or capacitor

427 86, 427 93, 427 95, 427248J, 427255, 427259, 156653, 156657, 156662, 148187, B05D 512, H01L 2122

Patent

active

041235649

ABSTRACT:
A method of producing a semiconductor device comprises removing all of the masking films used for forming desired semiconductor regions in the substrate, newly forming a first insulation film and selectively forming a second insulation film on predetermined portions of the first insulation film by the use of a polycrystalline silicon film as the mask.

REFERENCES:
patent: 3632433 (1972-01-01), Tokuyama
patent: 3795557 (1974-03-01), Jacob
patent: 3837905 (1974-09-01), Hile
patent: 3887726 (1975-06-01), Bratter
patent: 3930067 (1975-12-01), Gorrissen
patent: 4016007 (1977-04-01), Wada

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