Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1982-06-04

1984-08-14

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148189, 427 39, 427 85, 427 88, 204164, H01L 21225

Patent

active

044655290

ABSTRACT:
A method for producing an impurity containing semiconductor substrate includes depositing an impurity on selected portions of the substrate by placing a charge on the substrate and converting a gaseous impurity containing atmosphere into a plasma. The impurity may then be diffused into the substrate to a controlled and shallow depth by employing a laser or the like to selectively irradiate the impurity.

REFERENCES:
patent: 3576685 (1971-04-01), Swann et al.
patent: 3718502 (1973-02-01), Gibbons
patent: 4340617 (1982-07-01), Deutsch et al.
patent: 4342631 (1982-08-01), White et al.
patent: 4351674 (1982-09-01), Yoshida et al.
patent: 4364778 (1982-12-01), Leamy et al.

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