Method of producing semiconductor components and product thereof

Details Method of producing semiconductor components and product thereof Method of producing semiconductor components and product thereof

1975-11-04

1977-09-06

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148187, 148 335, 357 38, 357 39, H01L 21225

Patent

active

040466086

ABSTRACT:
Semiconductor components containing at least one junction and at least one weakly N- or P-conducting zone containing from 10.sup.13 to 2.5 .times. 10.sup.14 doping atoms/cm.sup.3 are prepared by diffusing dopant atoms at elevated temperatures into appropriate zones of a semiconductor crystal from a nickel film containing the dopant deposited on the surface of the crystal and then cooling the in-diffused semiconductor crystal to room temperature at a rate sufficient such that the specific resistance of the weakly doped zone is not changed by the nickel atoms which diffuse into the semiconductor crystal along with the doping atom.

REFERENCES:
patent: 3445735 (1969-05-01), Desmond et al.
patent: 3914138 (1975-10-01), Rai-Choudhury

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