Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-10-16
2007-10-16
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S458000, C117S922000, C257SE21120, C257SE21118
Reexamination Certificate
active
10573463
ABSTRACT:
The invention relates to a method for the production of self-supporting substrates comprising element III nitrides. More specifically, the invention relates to a method of producing a self-supporting substrate comprising a III-nitride, in particular, gallium nitride (GaN), which is obtained by means of epitaxy using a starting substrate. The invention is characterised in that it consists in depositing a single-crystal silicon-based intermediary layer by way of a sacrificial layer which is intended to be spontaneously vaporised during the III-nitride epitaxy step. The inventive method can be used, for example, to produce a flat, self-supporting III-nitride layer having a diameter greater than 2″.
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Bougrioua Zahia
Feltin Eric Pascal
Nataf Gilles
Centre National de la Recherche Scientifique "CNRS"
Coleman W. David
Lerner David Littenberg Krumholz & Mentlik LLP
Singal Ankush
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