Method of producing recrystallized-material-member, and apparatu

Details Method of producing recrystallized-material-member, and apparatu Method of producing recrystallized-material-member, and apparatu

1997-01-13

1999-08-03

Garrett-Hiteshew, Felisa C.

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 3, 117 10, 117 37, C30B 1526

Patent

active

059320036

ABSTRACT:
The present invention relates to a method of producing a recrystallized-material-member by melting a given zone of a crystalline-material-member and moving the molten zone continuously along the crystalline-material-member to recrystallize a desired region of the crystalline-material-member, wherein dimension of the molten zone of the crystalline-material-member is controlled to be constant and/or quality of crystal of the recrystallized-material-member is controlled to be uniform.

REFERENCES:
patent: 4578143 (1986-03-01), Arai
patent: 4707217 (1987-11-01), Aklufi
patent: 4737233 (1988-04-01), Kamgar et al.
patent: 4784723 (1988-11-01), Sakurai
patent: 4888302 (1989-12-01), Ramesh
patent: 5228948 (1993-07-01), Deguchi

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