Method of producing recessed gate of MESFET in compound semicond

Details Method of producing recessed gate of MESFET in compound semicond Method of producing recessed gate of MESFET in compound semicond

1989-08-23

1990-03-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 39, 437203, 437912, H01L 21265, H01L 2956, H01L 2980

Patent

active

049101579

ABSTRACT:
A method of producing a compound semiconductor device comprises the steps of: forming a recess portion on a compound semiconductor substrate; forming an ion penetrating mask on the recess portion in such a manner that the surfaces of the compound semiconductor substrate and the ion penetrating mask are level; forming an active layer having a substantially uniform depth is the compound semiconductor by implanting impurity ions into the entire exposed surface and, removing the ion penetrating mask and forming a gate electrode at the recess portion.

REFERENCES:
patent: 4173063 (1979-11-01), Kniepkamp et al.
patent: 4312112 (1982-01-01), Calviello
patent: 4713354 (1987-12-01), Egawa et al.

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