Single-crystal – oriented-crystal – and epitaxy growth processes; – Inorganic containing single-crystal (e.g. – compound – mixture – co – Silicon-oxygen bond containing (e.g. – emerald – beryl – garnet – mi
Reexamination Certificate
2007-08-28
2007-08-28
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Inorganic containing single-crystal (e.g., compound, mixture, co
Silicon-oxygen bond containing (e.g., emerald, beryl, garnet, mi
C117S930000, C359S328000, C359S332000, C385S003000, C385S122000, C385S129000
Reexamination Certificate
active
10523169
ABSTRACT:
Rectangular protruding parts2are formed on the surface of one side of a quartz crystal substrate1; these protruding parts2are formed as aggregates of rectangular protruding parts4of an even finer pattern. Recessed parts5which are lower than the surfaces of the protruding parts4are formed between the protruding parts4; however, the width of these recessed parts5is narrow, so that when the protruding parts4are viewed on the macroscopic scale, numerous protruding parts4are aggregated, and appear to form single protruding parts2. Such a quartz crystal substrate1is clamped between heater blocks from above and below, and the temperature of the quartz crystal substrate is elevated. At the point in time at which this temperature reaches a desired temperature, the substrate1is pressed by means of a press. Consequently, stress acts only on the portions corresponding to the protruding parts4, so that the crystal axis components are inverted only in these portions. These portions with inverted crystal axes grow into the interior portion of the crystal, and are propagated into the interior portion of the crystal, so that the portions corresponding to the protruding parts4are connected, thus forming crystal axis inversion regions6. As a result, crystal axis inversion regions with a desired shape can easily be formed.
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Tadashi Kurimura et al, Shigai Hacho Henkan o Mezashita Giji Iso Seigo Suishi, Oyo butsuri,Applied Physics, vol. 69, No. 5, pp. 548-552 (2000).
Harada Masaki
Kurimura Sunao
Frishauf Holtz Goodman & Chick P.C.
Kunemund Robert
National Institute for Materials Science
Rao G. Nagesh
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