Method of producing polycrystalline silicon components, particul

Details Method of producing polycrystalline silicon components, particul Method of producing polycrystalline silicon components, particul

1978-05-02

1979-10-23

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 136 89TF, 148 15, 357 30, 357 59, B01J 1700, H01L 2904

Patent

active

041719972

ABSTRACT:
A method of producing semiconductor components, particularly solar elements, in which a P- or N-semiconductor chip is subjected to an oxidation step prior to formation of the device PN junction, such that the external surface and internal grain boundaries of the wafer are covered by a passivating oxide layer. Thereafter, the oxide layer on at least a portion of the semiconductor chip is removed, and at least one PN junction is formed in the chip.

REFERENCES:
patent: 3649383 (1972-03-01), Akasaku
patent: 3900943 (1975-08-01), Sirtl et al.
patent: 3953876 (1976-04-01), Sirtl et al.
patent: 4019195 (1977-04-01), Merino
patent: 4062038 (1977-12-01), Cuomo et al.
Brodsky, ". . . Solar Cells with Polycrystalline Si . . . ", IBM-TDB, 18, 1975, 582.
AEG-Prospekt "TSG Terrestrische Solar-Generatoren" Jan., 1977.

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