Method of producing polycrystalline semiconductor thin film

Details Method of producing polycrystalline semiconductor thin film Method of producing polycrystalline semiconductor thin film

1994-06-15

1995-04-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437109, 437173, 148DIG48, 148DIG71, 117 8, 117 45, 117904, 117905, H01L 21469, H01L 2120

Patent

active

054098670

ABSTRACT:
After partially crystallizing an amorphous semiconductor deposited on a substrate, the irradition of infrared ray is conducted to grow a polycrystalline semiconductor layer on the crystallized region and the amorphous region by thermal decomposition while the temperature of the crystallized region is kept higher than that of the amorphous region. Since the polycystalline layer is formed of polycystalline grains grown from nuclei of the cystallized region, the crystal grain thereof is large.

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