Method of producing planar metal-to-metal capacitor for use in i

Details Method of producing planar metal-to-metal capacitor for use in i Method of producing planar metal-to-metal capacitor for use in i

1996-06-17

2000-05-30

Brown, Peter Toby

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438397, 438301, 438643, 438945, H01L 2120

Patent

active

060690518

ABSTRACT:
A method of fabricating on chip metal-to-metal capacitors (MMCAP) uses planar processing with a flexible choice of dielectric, thickness and capacitor shape. The method provides a simpler process which has a better yield and more reliable structure by creating a metal-to-metal capacitor on a planar surface, not in deep trenches. In addition to the process simplicity, the method also allows the use of any dielectric materials which are needed by the product designer; e.g., higher or lower dielectric constant and also not limited by high etch rate difference. Because the inventive process is a planar process, there are no corners in the bottom of deep trenches to cause yield and reliability problems. The capacitor area can be adjusted to any shape because there are no edge effects.

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