Method of producing photomask and exposing

Details Method of producing photomask and exposing Method of producing photomask and exposing

1994-11-04

1996-09-24

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

430311, 430312, 430315, G03F 900

Patent

active

055589634

ABSTRACT:
A photomask, a method of producing the same, a method of exposing using the same and a method of manufacturing a semiconductor device using the same are disclosed, which permit correlation to be found out with respect to a large number of mask condition parameters, thus permitting optimum condition to be obtained such as to be less aloof from the actual process, permits quantitative grasping of performance, permits reduction of time and cost, and permits effects of mask pattern size fluctuations, etc. into considerations.
Either defocus latitude, mask pattern size latitude II and exposure latitude I is combined with pluralities of data in predetermined ranges of the other two latitudes I and II to determine the permissible range of the first-noted latitude III for optimum value determination.

REFERENCES:
patent: 5316896 (1994-05-01), Fukuda et al.
Huynh et al, "Optical printability of defects in two-dimensional patterns", J. Vac. Sci. Technol., vol. B6, No. 6, Nov./Dec. 1988, pp. 2207-2212.
Tetsuo Ito, "Analysis for effects of mask defects to resist pattern using a three-dimensional photolithography simulator", Journal of Vacuum Science & Technology, vol. B8, No. 5, Sep./Oct. 1990, pp. 1080-1086.

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