Method of producing phase change memory device

Details Method of producing phase change memory device Method of producing phase change memory device

2011-07-26

2011-07-26

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S102000, C438S128000, C438S584000, C257SE21017, C257SE21075, C257SE21645

Reexamination Certificate

active

07985693

ABSTRACT:
An area where a lower electrode is in contact with a variable resistance material needs to be reduced to lower the power consumption of a variable resistance memory device. The present invention is to provide a method of producing a variable resistance memory element whereby the lower electrode can be formed smaller. Combining an anisotropic etching process with an isotropic etching process enables the lower electrode to be formed smaller.

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F. Bedeschi et al., “4-Mb MOSFET-Selected μTrench Phase-Change Memory Experimental Chip,” IEEE Journal of Solid-State Circuits, vol. 40:7, Jul. 2005, 1557-1565.

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