Method of producing p-type amorphous silicon carbide and solar c

Details Method of producing p-type amorphous silicon carbide and solar c Method of producing p-type amorphous silicon carbide and solar c

1989-09-18

1991-10-29

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 30, 427 39, 427 74, 437 4, 437100, 437101, H01L 31072, H01L 3118

Patent

active

050613227

ABSTRACT:
A method of producing a p-type hydrogenated amorphous silicon carbide thin film comprising the steps of preparing a raw material gas mixture consisting of a silicon compound, a hydrocarbon or a fluocarbon, and a boron compound, diluting the raw material gas mixture with hydrogen gas, and decomposing the raw material gas mixture by glow discharge to achieve a resultant film having a prescribed value of photoconductivity with a reduced optical absorption coefficient.

REFERENCES:
patent: 4775425 (1988-10-01), Guha et al.
patent: 4847215 (1989-07-01), Hanaki et al.
patent: 4910153 (1990-03-01), Dickson
Tawada, Y. et al., "Properties and Structure of a-SiC:H for High-Efficiency a-Si Solar Cell", Journal of Applied Physics, vol. 52, No. 7, pp. 5273-5281, Jul. 1982.

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