Method of producing P-doped silicon single crystal and...

Details Method of producing P-doped silicon single crystal and... Method of producing P-doped silicon single crystal and...

2007-05-08

2007-05-08

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S020000

Reexamination Certificate

active

10538878

ABSTRACT:
The present invention is a method of producing a P(phosphorus)-doped silicon single crystal by Czochralski method, wherein, at least, a growth of the single crystal is performed so that an Al (aluminum) concentration is 2×1012atoms/cc or more. Thereby, there can be provided a method of easily and inexpensively producing a P(phosphorus)-doped silicon single crystal of defect-free region having an excellent capability of electrical characteristics to be high breakdown voltage, which contains neither, for example, V region, OSF region, nor large dislocation cluster (LSEPD, LFPD) region.

REFERENCES:
patent: A 2000-178099 (2000-06-01), None
patent: A 2000-351690 (2000-12-01), None
VORONKOV, “The Mechanism of Swirl Defects Formation in Silicon,”Journal of Crystal Growth, vol. 59, No. 3, pp. 625-643 (Mar. 1, 1982).
Dupret et al., “Global Modelling of Heat Transfer in Crystal Growth Furnaces,”Int. J. Heat Mass Transfer., vol. 33, No. 9, pp. 1849-1871 (Apr. 7, 1998).

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