Method of producing optoelectronic devices with control of light

Details Method of producing optoelectronic devices with control of light Method of producing optoelectronic devices with control of light

1978-04-26

1979-02-06

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148175, 357 18, 331 945H, H01S 300, H01S 306, H01S 318, H01L 21225

Patent

active

041382749

ABSTRACT:
In an optoelectronic device, light is restrained from propagating in one or both confining layers on either side of an active layer by forming one or more photon absorbing barriers in one, or both, confining layers. A photon absorbing barrier can be formed by proton bombardment of a confining layer, by producing a protrusion from the substrate into the adjacent confining layer, or by producing a protrusion from a capping layer into the other confining layer, or by combinations of these. Spaced apart barriers can define a device, or sections of a multisectioned device, for example a monolithic light emitting diode and modulator.

REFERENCES:
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patent: 3893044 (1975-07-01), Dumke et al.
patent: 3982207 (1976-09-01), Dingle et al.
patent: 4011113 (1977-03-01), Thompson et al.
patent: 4077817 (1978-03-01), Bellavance
Tsukada, "GaAs-Ga.sub.1-x Al.sub.x As B-H . . . Lasers" Jr. Appl. Phys. 45 (1974) 4899.
DeGelormo et al, "Fabrication of . . . Laser" IBM - TDB, 16 (1973) 2156.
Dyment et al, "Optical . . . Properties of . . . GaAs" J. Appl. Phys. 44 (1973) 207.

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