Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
1998-12-11
2001-01-16
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S031000
Reexamination Certificate
active
06174746
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a method of producing optical waveguides on inorganic substrates.
BACKGROUND INFORMATION
It is known that optical waveguides can be produced on glass plates made of sodium silicate glass, with Na
+
ions in the glass being replaced by Ag
+
ions from a silver bath. The areas of the substrate where the exchange is to take place are usually defined by patterned covering of the surface areas of the substrate not intended for exchange by photoresist masks or copy resist masks in patterns obtained by exposing and washing or developing the photoresist layer. After treatment in a silver bath, which only has access to the exposed surface areas of the substrate, the refractive index in these areas is increased in comparison with the surrounding glass. This yields an optical waveguide, with the evanescent wave being located completely in the thick substrate glass. It would be desirable in principle to produce optical waveguides in silicon dioxide layers instead of glass, because this would offer the possibility of combining them with semiconductor elements. However, this is made difficult by the fact that thick silicon dioxide layers cannot be produced in an adequate optical quality; a high-grade thermally produced oxide can be manufactured industrially only up to a thickness of a few &mgr;m. This would not be sufficient for the evanescent light field. Furthermore, the oxide cannot be doped completely homogeneously with sodium ions, which would be necessary for an exchange reaction.
SUMMARY OF THE INVENTION
According to the present invention, a method is provided for producing an optical waveguide, with a substrate containing silicon being etched porously to a defined depth by anodic oxidation in an electrolyte containing hydrofluoric acid. The etched substrate is doped in a suitable dopant liquid containing cations, and the doped layer of porous silicon is oxidized to silicon dioxide at a temperature in the range of 600 to 900° C. The oxidized porous layer is made to collapse at a temperature in the range of approximately 1050° C. to 1150° C., with the surface of the collapsed silicon dioxide layer being covered in a pattern by the lithographic technique. The cations are replaced by silver ions in the uncovered areas of the surface by bringing the surface in contact with a solution containing silver ions or silver complex ions.
The method according to the present invention also makes it possible to produce thick (e.g., more than 5 &mgr;m) homogeneously doped oxide layers on silicon substrates, in particular silicon wafers, with excellent electrical and optical properties, with an optical waveguide optionally being integrated subsequently. An optical waveguide can be manufactured very inexpensively by this especially simple procedure, requiring only one mask plane. All the steps are available in semiconductor manufacturing, so it is possible to integrate optical waveguides into semiconductors as standard procedure.
Alkali metal ions such as sodium or lithium ions are thus preferably used as dopant cations. The dopant liquids are preferably aqueous solutions, generally containing the cations as salts, optionally also as hydroxides. Examples of suitable salts include carbonates, bicarbonates and halides, e.g., fluorides or chlorides, or acetates.
A suitable agent such as ethanol may be added to the dopant liquid to reduce surface tension. This improves homogeneous penetration of the entire porous area.
Due to anodic oxidation in an electrolyte containing hydrofluoric acid, in particular an aqueous electrolyte, the substrate is porously etched to a desired depth. This anodic etching is known per se and is described, for example, in U.S. Pat. No. 5,338,416 or the article “Porous Silicon Morphologies and Formation Mechanism” by Smith et al. in Sensors and Actuators (Elsevier Sequoia), A21-A23 (1990), pages 825-829. The porous material has an extremely enlarged surface area in comparison with the starting material (e.g., by a factor on the order of 10
6
in the case of nanoporous silicon). This greatly increases the chemical reactivity and diffusion rate in the material. Then if the substrate is immersed in a suitable dopant liquid, the dopant atoms become incorporated into the silicon. Because of the sponge structure of the porous material with web widths in the range of a few nanometers, the porous layer is completely doped throughout.
The doped layer of porous silicon is then stabilized at relatively low temperatures in the range of 250 to 500° C., preferably about 300° C., and thermally oxidized at a temperature in the range of approximately 600 to 900° C., e.g. at about 800° C. Because of the high reactivity of porous silicon in comparison with the solid material, oxidation takes place relatively rapidly, i.e., within a few minutes to a few hours, depending on porosity, generally within about two hours. Then the resulting porous silicon layer is made to collapse within a short period of time, i.e., from about ten minutes to four hours, within about one hour in many cases, by heating to approximately 1050° C. to 1150° C., e.g., to about 1100° C. The oxide melts, forming a compact oxide layer at least 5 &mgr;m thick with electrical and optical properties comparable to those of thermally produced solid silicon dioxide.
The desired optical waveguide is then produced by the lithographic or photoresist technique. The surface is covered with a suitable resist layer and processed, e.g., by photolithographic techniques by patterned exposure and washing, to form an image mask which is then brought in contact with a solution containing silver ions or silver complex ions, e.g., a silver nitrate solution, an ammoniacal solution of silver chloride or a dicyanoargentate solution. Alkali ions in the oxide layer are replaced by silver ions in the surface areas not covered by the resist mask.
In addition to metallic silicon, other porous semiconductor materials such as silicon carbide may also be used as substrates and processed as described above.
REFERENCES:
patent: 5338416 (1994-08-01), Mlcak et al.
patent: 5421958 (1995-06-01), Fathauer et al.
patent: 5736749 (1998-04-01), Xie
patent: 5811348 (1998-09-01), Matsushita et al.
Frey Wilhelm
Laermer Franz
Moellendorf Manfred
Kenyon & Kenyon
Le Dung A
Nelms David
Robert & Bosch GmbH
LandOfFree
Method of producing optical waveguides does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing optical waveguides, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing optical waveguides will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2527659