Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region
Reexamination Certificate
2007-01-19
2010-11-09
Kunemund, Robert M (Department: 1714)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having moving solid-liquid-solid region
C117S046000, C117S050000, C117S072000, C117S075000
Reexamination Certificate
active
07828895
ABSTRACT:
The invention relates to a method of producing an optical element using a garnet single crystal for the purpose of providing an optical element with a reduced Pb content or from which Pb can preliminarily be removed completely. By growing a garnet single crystal by using a solution containing Na, Bi and B by the LPE process and thermally treating the garnet single crystal in reducing atmosphere prepared by using nitrogen gas and/or hydrogen gas, the resulting thermally treated garnet single crystal is used to prepare an optical element.
REFERENCES:
patent: 4077832 (1978-03-01), Robertson et al.
patent: 4402787 (1983-09-01), Matsuzawa et al.
patent: 4444615 (1984-04-01), Matsuzawa et al.
patent: 4519870 (1985-05-01), Matsuzawa et al.
patent: 4698820 (1987-10-01), Brandle et al.
patent: 5920420 (1999-07-01), Ishikura et al.
patent: 6059878 (2000-05-01), Takeda et al.
patent: 6527973 (2003-03-01), Ohido et al.
patent: 6775052 (2004-08-01), Sugawara et al.
patent: 6853473 (2005-02-01), Ohido et al.
patent: 6875270 (2005-04-01), Ohido et al.
patent: 7022303 (2006-04-01), Riman et al.
patent: 7133189 (2006-11-01), Ohido et al.
patent: 7187496 (2007-03-01), Sugawara et al.
patent: 7242516 (2007-07-01), Sugawara et al.
patent: 7280264 (2007-10-01), Goto et al.
patent: 7333261 (2008-02-01), Ohido et al.
patent: 7517406 (2009-04-01), Ohido et al.
patent: 2003/0211369 (2003-11-01), Riman et al.
patent: 2003/0219261 (2003-11-01), Ohido et al.
patent: 2006/0112873 (2006-06-01), Uchida et al.
patent: 2007/0002425 (2007-01-01), Goto et al.
patent: 2007/0160875 (2007-07-01), Ohido
patent: 2007/0193504 (2007-08-01), Ohido
patent: 2008/0095686 (2008-04-01), Ohido
patent: 2009/0294682 (2009-12-01), Perna
patent: 2009/0294683 (2009-12-01), Perna
patent: 1439749 (2003-09-01), None
patent: 2 318 798 (1973-10-01), None
patent: 0 208 476 (1987-01-01), None
patent: B-57-045719 (1982-09-01), None
patent: B 57-45719 (1982-09-01), None
patent: A 62-143893 (1987-06-01), None
patent: B2-06-046604 (1994-06-01), None
patent: A 09-202697 (1997-08-01), None
patent: A-10-072296 (1998-03-01), None
patent: A-2000-086396 (2000-03-01), None
patent: A 2001-044026 (2001-02-01), None
patent: A-2001-044026 (2001-02-01), None
patent: A 2001-044027 (2001-02-01), None
patent: A-2001-044027 (2001-02-01), None
patent: A 2003-306397 (2003-10-01), None
patent: A 2004-83390 (2004-03-01), None
patent: A-2004-083390 (2004-03-01), None
patent: A-2004-269305 (2004-09-01), None
patent: A-2006-169093 (2006-06-01), None
patent: A 2006-169093 (2006-06-01), None
patent: WO 2005/056887 (2005-06-01), None
patent: WO 2006/054628 (2006-05-01), None
J.H. Park, “Growth of Epitaxial Garnet Film by LPE for Application to Integrated Magneto-Optic Light Switch Arrays”, Phys. Stat. Sol., vol. 201, No. 8, Jun. 2004, pp. 1976-1979.
J. H. Park et al., “Growth of Epitaxial Garnet Film by LPE for Application to Integrated Magneto-Optic Light Switch Arrays” Phys. Stat. Sol., vol. 201, No. 8, 2004, pp. 1976-1979.
Robertson, J.M.; “Improvement of Lead-Free Flux Systems for the Growth of Bismuth-Substituted Iron Garnet Films by Liquid Phase Epitaxy,”Journal of the Electrochemical Society; vol. 123, No. 8; Aug. 1976; pp. 1248-1249.
Feb. 24, 2010 Office Action issued in U.S. Appl. No. 11/704,192.
European Search Report issued May 17, 2010 in Application No. EP 07 00 1472.
Office Action issued Jun. 23, 2010 in U.S. Appl. No. 11/704,192.
Kunemund Robert M
Oliff & Berridg,e PLC
TDK Corporation
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