Method of producing nitride semiconductor light-emitting...

Details Method of producing nitride semiconductor light-emitting... Method of producing nitride semiconductor light-emitting...

2011-06-28

2011-06-28

Pizarro, Marcos D (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S483000, C438S681000, C257S103000, C257SE33023

Reexamination Certificate

active

07968360

ABSTRACT:
In a method of producing a nitride semiconductor light-emitting device including a nitride semiconductor active layer (105) held between an n-type nitride semiconductor layer (103, 104) and a p-type nitride semiconductor layer (106to108) on a substrate (101), at least any one of the n-type layer, the active layer and the p-type layer includes a multilayer film structure, and a surfactant material is supplied to a crystal growth surface just before, during or after crystal growth of a layer included in the multilayer film structure.

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