Method of producing multi-wavelength semiconductor laser device

Details Method of producing multi-wavelength semiconductor laser device Method of producing multi-wavelength semiconductor laser device

2007-09-18

2009-10-20

Fahmy, Wael (Department: 2814)

Coherent light generators

Particular active media

Semiconductor

C372S050120, C372S050122, C438S029000, C438S034000, C438S035000, C438S046000, C438S047000

Reexamination Certificate

active

07606280

ABSTRACT:
A method for producing a multi-wavelength semiconductor laser device includes steps of: forming first and second nitride epitaxial layers in parallel on a substrate for growth of a nitride single crystal; separating the first and second nitride epitaxial layers from the substrate; attaching the separated first and second nitride epitaxial layers to a first conductivity-type substrate; selectively removing the first and second nitride semiconductor epitaxial layers to expose a portion of the first conductivity-type substrate and to form first and second semiconductor laser structures, respectively; and forming a third semiconductor laser structure on the exposed portion of the first conductivity-type substrate.

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