Method of producing multi-wavelength semiconductor laser device

Details Method of producing multi-wavelength semiconductor laser device Method of producing multi-wavelength semiconductor laser device

2007-09-19

2009-10-20

Fahmy, Wael (Department: 2814)

Coherent light generators

Particular active media

Semiconductor

C372S050120, C372S050122, C438S029000, C438S034000, C438S035000, C438S046000, C438S047000

Reexamination Certificate

active

07606281

ABSTRACT:
A method for producing a multi-wavelength semiconductor laser device includes the steps of: forming a nitride epitaxial layer on a substrate for growth of a nitride single crystal; separating the nitride epitaxial layer from the substrate; attaching the separated nitride epitaxial layer to a first conductivity-type substrate; selectively removing the nitride semiconductor epitaxial layer to expose a portion of the first conductivity-type substrate and to form a first semiconductor laser structure; and sequentially forming second and third semiconductor laser structures on the exposed portion of the first conductivity-type substrate.

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Japanese Patent Office, Office Action mailed Jan. 22, 2008 and English Translation.

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