Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-05-25
1981-03-10
Dean, R.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29572, 148 15, 148174, 156610, 156612, 156DIG88, 156657, 156155, H01L 21203, H01L 21306
Patent
active
042552087
ABSTRACT:
A method is described for producing semiconductor films, particularly monocrystalline silicon and germanium films, characterized by the steps of: epitaxially growing on a substrate, such as silicon or sapphire, a layer of dissolvable material, such as sodium fluoride, sodium chloride, or silver; epitaxially growing on the dissolvable layer a layer of the semiconductor; and dissolving the dissolvable layer, thereby separating the semiconductor from the substrate. The substrate may thus be reused as a matrix for growing many such films. Also a plurality of semiconductor layers may be epitaxially grown on a common substrate each separated by a dissolvable layer, all the latter layers being dissolved at one time to produce a plurality of the semiconductor films.
REFERENCES:
patent: 3158511 (1964-11-01), Robillard
patent: 3186880 (1965-06-01), Skaggs et al.
patent: 3370980 (1968-02-01), Anderson
patent: 3382099 (1968-05-01), Montmory
patent: 3900943 (1975-08-01), Sirtl et al.
patent: 3914856 (1975-10-01), Fang
patent: 3993533 (1976-11-01), Milnes et al.
patent: 4116751 (1978-09-01), Zaromb
patent: 4152535 (1979-05-01), Deminet et al.
patent: 4159354 (1979-06-01), Milnes et al.
Newman, R. C., "Review of Growth . . . Germanium and Silicon" Microelectronics, vol. 3, 1964, pp. 121-138.
Finne et al., "Water-Amine-Complexing Agent for Etching Silicon" J. Electrochem. Soc., vol. 114, No. 9, Sep. 1967, pp. 965-970.
Milnes et al., "Peeled Film Technology for Solar Cells" Conf. Record, 11th IEEE Photospecialists Conf., May 1975, pp. 338-341.
Cherry, W. R., "Large Area Sola Cells" Proc. 13th Power Sources Conf. (Apr. 1959), pp. 62-66.
Deutscher Siegfried G.
Grunbaum Enrique
Barish Benjamin J.
Dean R.
Ramot University Authority for Applied Research and Industrial
Saba W. G.
LandOfFree
Method of producing monocrystalline semiconductor films utilizin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing monocrystalline semiconductor films utilizin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing monocrystalline semiconductor films utilizin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1292688