Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2003-12-22
2009-02-24
Lee, Hsien-ming (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S459000, C257SE21499
Reexamination Certificate
active
07494897
ABSTRACT:
The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.
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Aspar Bernard
Fournel Franck
Moriceau Hubert
Zussy Marc
Brinks Hofer Gilson & Lione
Commissariat a l''Energie Atomique
Lee Hsien-ming
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