Method of producing magnetoresistive sensor

Details Method of producing magnetoresistive sensor Method of producing magnetoresistive sensor

1998-02-20

1999-02-02

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

216 79, 427129, 427130, 427131, 427307, 427331, B01J 1908

Patent

active

058662120

ABSTRACT:
A magnetoresistive (MR) sensor for MR heads comprising a magnetoresistive ferromagnetic layer (MR layer) and an antiferromagnetic layer in direct contact with the surface of the MR layer. The MR layer has a face-centered-cubic (fcc) structure. The crystalline structure of the antiferromagnetic layer is the fcc structure in the vicinity of the interface of the MR layer and the antiferromagnetic layer, and continuously changes to a face-centered-tetragonal (fct) structure toward the surface opposite to the interface. The interface of the MR layer and the antiferromagnetic layer is continuous with respect to the crystalline structure due to the epitaxial growth of the antiferromagnetic layer on the surface of the MR layer.

REFERENCES:
patent: 5315468 (1994-05-01), Lin et al.
patent: 5380548 (1995-01-01), Lin et al.
patent: 5436778 (1995-07-01), Lin et al.
IEEE Trans. Mag., Unidirectional Anistropy in Nickel-Iron Films by Exchange Coupling with Antiferromagnetic Films, R.D. Hempstead et al., 1978, 521-523 (No Month Avail.).
Appl. Phys. Lett, 65 (9), Improved Exchange Coupling Between Ferromagnetic Ni-Fe and Antiferromagnetic Ni-Mn-Based Films, T. Lin et al., Aug. 29, 1994, 1183-1185.
J. Phys. Chem. Solids Pergamon Press, The Antiferromagnetic Structure of NiMn, J.S. Kasper et al., May 7, 1959, 231-238.

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