Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-12-27
1998-05-05
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 84, C30B 2300
Patent
active
057468273
ABSTRACT:
A method for producing crystals of silicon carbide in a furnace. The furnace has a crucible with a cavity in which the cavity has first and second spaced-apart regions. The crucible cavity of the furnace is capable of being heated, preferably by induction or resistance heating, with insulation placed around the crucible and crucible cavity. A source material of silicon carbide is provided at the first region of the crucible cavity, and a monocrystalline seed is placed at the second region of the crucible cavity. A first growth stage is then conducted in which the first region and the second region of the crucible cavity are heated to at least the sublimation temperature of silicon carbide under substantially isothermal conditions. Then, a second growth stage is conducted in which a temperature gradient is provided between the first and the second region of the crucible cavity, such that the seed in the second crucible region is kept at a temperature lower than a temperature of the first crucible region.
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Barrett Donovan L.
Hopkins Richard H.
Seidensticker, deceased Raymond G.
Thomas Richard N.
Garrett Felisa
Northrop Grumman Corporation
Sutcliff Walter G.
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