Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-05-22
1986-12-30
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29578, 29577C, 29591, 148DIG20, 148DIG100, 148DIG106, 427 89, 1566591, 156644, H01L 2128, H01L 21312, H01L 2188
Patent
active
046318062
ABSTRACT:
Method of producing two-layer metal interconnections in a semiconductor integrated circuit structure coated with silicon dioxide. Masking material is deposited on the silicon dioxide. Openings are formed in the masking material and then in the silicon dioxide to expose contact areas on the integrated circuit structure. A first metal, tungsten, is deposited on the masking material and on the contact areas exposed at the openings. The masking material and the overlying tungsten are stripped off leaving tungsten only on the contact areas. A second metal, aluminum, is deposited over the silicon dioxide and the tungsten on the contact areas. Aluminum is selectively removed to form a pattern of conductive members of tungsten-aluminum on the contact areas and of aluminum over the silicon dioxide.
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Agnihotri et al "Single Photoresist for Polyimide-Insulator Via" IBM Tech. Disc. Bull. vol. 22, No. 5, Oct. 1979, pp. 1821-1822.
Degenkolb Eugene O.
Poppert Paul E.
Tabasky Marvin J.
GTE Laboratories Incorporated
Hearn Brian E.
Hey David A.
Keay David M.
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