Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1977-08-17
1979-01-30
Dixon, Harold A.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250492B, A61K 2702
Patent
active
041374576
ABSTRACT:
Implanted areas are produced on a substrate by irradiating the surface of the substrate with two coherent high kinetic energy beams which are superimposed in relation to one another and spaced from the substrate surface in such a manner that maxima and/or minima of an interference pattern formed by the two particle streams are located on the substrate surface.
REFERENCES:
patent: 2741704 (1956-04-01), Trump et al.
patent: 3434894 (1969-03-01), Gale
patent: 3445926 (1969-05-01), Medved
patent: 3761721 (1973-09-01), Altshuler
Dixon Harold A.
Siemens Aktiengesellschaft
LandOfFree
Method of producing implanted areas in a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing implanted areas in a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing implanted areas in a substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1152137