Stone working – Sawing – Endless
Reexamination Certificate
2006-12-28
2008-12-16
Rachuba, Maurina (Department: 3723)
Stone working
Sawing
Endless
C438S481000
Reexamination Certificate
active
07464702
ABSTRACT:
An ingot3of a hexagonal III-nitride crystal is cut using a wire array21composed of a wire22. On this occasion, the ingot3is cut in such a manner that the ingot3is sliced with supply of an abrasive fluid while feeding at least one of the ingot3and wire22in a direction perpendicular to an extending direction B of the wire22. During cutting the ingot3, the extending direction B of the wire22is inclined at 3° or more to the {1-100} plane of the ingot3.
REFERENCES:
patent: 4274389 (1981-06-01), White et al.
patent: 5699782 (1997-12-01), Toyama
patent: 6139591 (2000-10-01), Nakaura et al.
patent: 6413627 (2002-07-01), Motoki et al.
patent: 7045223 (2006-05-01), Kokta et al.
patent: 7048867 (2006-05-01), Maleville
patent: 7112826 (2006-09-01), Motoki et al.
patent: 2002/0014681 (2002-02-01), Tsuda et al.
patent: 2002/0028564 (2002-03-01), Motoki et al.
patent: 2004/0089919 (2004-05-01), Motoki et al.
patent: 2005/0224783 (2005-10-01), Matsuyama et al.
patent: 9-17755 (1997-01-01), None
patent: 2842307 (1998-10-01), None
patent: 11-251269 (1999-09-01), None
patent: 2000-22212 (2000-01-01), None
patent: 2001-1335 (2001-01-01), None
patent: 2002-29897 (2002-01-01), None
patent: 2002-46067 (2002-02-01), None
patent: 2003-527296 (2003-09-01), None
patent: 2003-320521 (2003-11-01), None
patent: WO 01/68955 (2001-09-01), None
Notification of Transmittal of Copies of Translation of the International Preliminary Report on Patentability (Chapter I or Chapter II of the Patent Cooperation Treaty) dated Jul. 19, 2007, issued in PCT/JP2005/023918.
McDermott Will & Emery LLP
Rachuba Maurina
Sumitomo Electric Industries Ltd.
LandOfFree
Method of producing III-nitride substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing III-nitride substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing III-nitride substrate will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4033528