Method of producing hydrogenated amorphous silicon film

Details Method of producing hydrogenated amorphous silicon film Method of producing hydrogenated amorphous silicon film

1979-04-18

1980-12-02

Cooper, Jack

Coating processes

Electrical product produced

Photoelectric

252 623E, 423349, 427 84, 427 95, 428428, 428446, C01B 3302

Patent

active

042371503

ABSTRACT:
This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH.sub.4) or other gases comprising H and Si, from a tungsten or carbon foil heated to a temperature of about 1400.degree.-1600.degree. C., in a vacuum of about 10.sup.-6 to 19.sup.-4 torr, to form a gaseous mixture of atomic hydrogen and atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

REFERENCES:
patent: 2993763 (1961-07-01), Lewis
patent: 4064521 (1977-12-01), Carlson
patent: 4113514 (1978-09-01), Pankore et al.
patent: 4142004 (1979-02-01), Hauser et al.
patent: 4151058 (1979-04-01), Kaplan et al.
Deneuville et al. "Thin Solid Films", vol. 55, No. 1, Nov. 1978 pp. 137-141, Elsevier Sequola S. A. Lausanne.

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