Method of producing homogeneously doped p-conductive semiconduct

Details Method of producing homogeneously doped p-conductive semiconduct Method of producing homogeneously doped p-conductive semiconduct

1975-08-11

1977-05-24

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 91, H01L 2126

Patent

active

040253651

ABSTRACT:
A homogeneously doped p-conductive semiconductor material is produced by irradiating a desired semiconductor material with .gamma.-photons which trigger nuclear reactions within such irradiated material to form dopant atoms therein.

REFERENCES:
patent: 2666814 (1954-01-01), Shockley
patent: 3430043 (1969-02-01), Blumenfeld et al.

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