Method of producing homogeneously doped n-type Si monocrystals b

Details Method of producing homogeneously doped n-type Si monocrystals b Method of producing homogeneously doped n-type Si monocrystals b

1974-11-06

1977-08-16

Behrend, Harvey E.

Metal treatment

Stock

Ferrous

176 12, 148 15, G21G 106

Patent

active

040424545

ABSTRACT:
Si monocrystals of the n-type are produced by zone melting polycrystalline Si rods under conditions sufficient to produce monocrystal rods, measuring the specific conductivity of such monocrystal rods and subjecting such monocrystal rods to a controlled radiation by thermal neutrons based on the measured conductivity to produce a desired degree of n-conductivity in the ultimately attained rods.

REFERENCES:
patent: 3076732 (1963-02-01), Tanenbaum
patent: 3134700 (1964-05-01), Sporrer
patent: 3175891 (1965-03-01), Keller et al.
patent: 3255050 (1966-06-01), Klahr
patent: 3366462 (1968-01-01), Kersting et al.
patent: 3705789 (1972-12-01), Keller
patent: 3734695 (1973-05-01), Campbell
Soviet Physics-Semiconductors, vol. 4, No. 10, Apr. 71, pp. 1610-1615.
Nucleonics, Apr. 1964, vol. 22, No. 4, pp. 62-65.

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