Method of producing homogeneously doped n-type Si monocrystals a

Details Method of producing homogeneously doped n-type Si monocrystals a Method of producing homogeneously doped n-type Si monocrystals a

1974-12-06

1977-05-31

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

148 15, 357 63, 357 91, B05D 306

Patent

active

040270513

ABSTRACT:
Homogeneously doped Si monocrystals of the n-type are produced from p- or n-type Si crystals having a random dopant concentration in radial and axial directions of the crystal and the dopant concentration within such crystals is adjusted by subjecting such crystals to controlled thermal neutron radiation.

REFERENCES:
patent: 3076732 (1963-02-01), Tanenbaum
Tanenbaum et al., "J. Electrochemical Soc." vol. 108, No. 2, Feb. 1961, pp. 171-176.

Affiliated with

Also associated with

Rating

Method of producing homogeneously doped n-type Si monocrystals a does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing homogeneously doped n-type Si monocrystals a, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing homogeneously doped n-type Si monocrystals a will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-658900