Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-06-12
1991-07-23
Beck, Shrive
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505702, 505701, 505731, 427 62, 427 63, 357 5, B05D 512
Patent
active
050343742
ABSTRACT:
A method of producing a high temperature superconductor Josephson element for an electronic device or a photodetector comprising the steps of: forming a lower ceramic superconductor film on a substrate; forming an upper ceramic superconductor of a different system ceramic from that of the lower ceramic superconductor film on a portion of the lower ceramic superconductor and on the substrate; and forming an insulating layer (tunnel barrier) between the lower and upper ceramic superconductor films by an interdiffusion therebetween.
REFERENCES:
Severin et al, "Superconducting YBa.sub.2 Cu.sub.3 O.sub.x thi layers by solid state diffusion," Mat. Res. Bull., vol. 23 (1988) pp. 707-717.
Nakao et al, "Magnetron Sputtering of B.sub.1 -Ca-SR-Cu-O thin films with supercondcuting above 80k", Jpn. J. Appl. Phys. vol. 27(3) Mar. 1988 L 378-380.
Hakuraku et al, "Superconducting thin films of Bi-Pb-Sr-CA-Cu-O by dc Magnetron Sputtering from a Single Target", Jpn. J. Appl. Phys. vol. 27(11 Nov. 1988 pp. 2091-2093.
Awaji Naoki
Kikuchi Yoshio
Beck Shrive
Fujitsu Limited
King Roy V.
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