Method of producing high resolution and reproducible patterns

Details Method of producing high resolution and reproducible patterns Method of producing high resolution and reproducible patterns

1990-04-16

1992-08-18

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430313, 430317, 430325, 430329, 156626, 156643, 156646, 1566591, 20419233, 356357, G03F 736

Patent

active

051399040

ABSTRACT:
A method of producing high-resolution and reproducible patterns, typically polysilicon ultra-fine lines. According to a preferred embodiment of the method, a layer of a standard radiation-sensitive resist is applied over a polysilicon layer formed on a substrate. The photoresist is delineated as is standard in conventional UV lithography equipment to produce a first resist pattern. The structure is then placed in reactive ion etching (RIE) equipment and the resist pattern is isotropically eroded to reduce overall dimensions. The etched thickness (dTH) is accurately measured by interferometric techniques, so that the corresponding lateral dimension reduction (dW) is continuously monitored. The etching is terminated when the appropriate lateral dimension reduction has been obtained to produce a second resist pattern of the desired final width (LWf). The second resist pattern (17a') is then anisotropically transferred to the underlying polysilicon layer by reactive ion etching. Finally, the second resist pattern is removed to leave the desired polysilicon pattern having the desired final width (LWf).

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