Method of producing high quality relaxed silicon germanium...

Details Method of producing high quality relaxed silicon germanium... Method of producing high quality relaxed silicon germanium...

2006-05-09

2006-05-09

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S102000, C117S105000, C117S939000

Reexamination Certificate

active

07041170

ABSTRACT:
A method for minimizing particle generation during deposition of a graded Si1-xGexlayer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGexlayer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2on the substrate.

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International Search Report for International Application No. PCT/US2004/007911 dated Sep. 10, 2004 (4 pages).

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