Coating apparatus – Gas or vapor deposition – Work support
Reexamination Certificate
2007-07-03
2007-07-03
Johnson, Christina (Department: 1732)
Coating apparatus
Gas or vapor deposition
Work support
C118S725000, C118S050000, C264S081000, C427S565000
Reexamination Certificate
active
10421319
ABSTRACT:
An apparatus for the manufacture of chemical vapor deposited domes. The apparatus has a vapor deposition chamber with a plurality of sides, a base and a top where the base has a reactant port for receiving a flow of chemical reactants. A male mandrel is joined to one of a plurality of sides of the deposition chamber such that the flow of chemical reactants in the vapor deposition chamber does not impinge on the mandrel.
REFERENCES:
patent: 4978577 (1990-12-01), Purohit et al.
patent: 4997678 (1991-03-01), Taylor et al.
patent: 5453233 (1995-09-01), Teverovsky et al.
patent: 5470651 (1995-11-01), Milinkovic et al.
patent: 5594185 (1997-01-01), Weber et al.
patent: 5686195 (1997-11-01), Taylor et al.
patent: 6007634 (1999-12-01), Weber et al.
patent: 6042758 (2000-03-01), Goela
patent: 6228297 (2001-05-01), Goela et al.
patent: 0 619 384 (1996-09-01), None
patent: 0 955 392 (2002-09-01), None
patent: 1 018 567 (2003-07-01), None
Goela et al., “Precision Replication of Conformal ZnS Optics”, 7thDOD Electromagnetic Window Symposium at APL, Laurel, MD, pp. 1-8, May 5-7, 1998.
Goela et al., “Fabrication of Conformal ZnS Domes by Chemical Vapor Deposition”, SPIE Meeting, Orlando, Florida, Apr. 5-9, 1999 and May 11-13, 1999.
Goela et al., “Replication of Conformal Surfaces by Chemical Vapor Deposition”, Proceedings 8thDOD Electromagnetic Windows Symposium, U.S. Airforce Academy, pp. 313-326, Apr. 24-27, 2000.
Goela et al.; “Monolithic Material Fabrication by Chemical Vapour Deposition”; Journal of Materials Science, Springer/Business Media; vol. 23, No. 12; Dec. 1988; pp. 4331-4339.
Goela Jitendra S.
Salihbegovic Zlatko
Daniels Matthew J.
Johnson Christina
Piskorski John J.
Shipley Company L.L.C.
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