Method of producing group 3 nitride substrate wafers and...

Details Method of producing group 3 nitride substrate wafers and... Method of producing group 3 nitride substrate wafers and...

2007-07-11

2010-02-16

Fourson, George (Department: 2823)

Metal treatment

Barrier layer stock material, p-n type

C438S693000, C257SE21239

Reexamination Certificate

active

07662239

ABSTRACT:
Quality of one-surface planar processed group3nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a plurality of group3nitride as-grown wafers on a polishing plate with OFs or notches facing forward (f), backward (b) or inward (u) with thermoplastic wax having a thickness of 10 μm or less, grinding the as-grown wafers, lapping the ground wafers, polishing the lapped wafers into mirror wafers with a bevel of a horizontal width of 200 μm or less and a vertical depth of 100 μm or less.

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