Method of producing GaN-based semiconductor laser device and...

Details Method of producing GaN-based semiconductor laser device and... Method of producing GaN-based semiconductor laser device and...

2005-02-15

2005-02-15

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S022000, C438S044000, C438S047000

Reexamination Certificate

active

06855571

ABSTRACT:
The present invention provides a method for fabricating a GaN-based semiconductor laser device comprising the steps of forming a GaN-based semiconductor layer102on a substrate101; forming, on the surface of the first GaN-based semiconductor layer, a mask layer103that comprises a striped pattern composed of a plurality of band-like portions103athat are regularly arranged in the width direction and an alignment pattern formed by altering the regularity of some portion of the plurality of band-like portions103a; depositing a second GaN-based semiconductor layer104on the mask layer103by the selective lateral growth method with starting points at portions of the first GaN-based semiconductor layer104that are exposed from the mask layer103; forming a multi-layered semiconductor that comprises an n-type GaN-based semiconductor layers105to107, an active layer108, and a p-type GaN-based semiconductor layers109to111on the second GaN-based semiconductor layer104; and forming a current injection region112directly above the band-like portion103awhile using the alignment pattern as a reference to position the current injection region.

REFERENCES:
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6627521 (2003-09-01), Furukawa et al.
patent: 6720196 (2004-04-01), Kunisato et al.
patent: 11-103135 (1999-04-01), None

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