Method of producing GaAs single crystal substrate using three st

Details Method of producing GaAs single crystal substrate using three st Method of producing GaAs single crystal substrate using three st

1991-12-12

1992-08-11

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437225, 437946, 437974, 148DIG3, 148DIG51, 148DIG56, 148DIG65, H01L 21324

Patent

active

051378477

ABSTRACT:
A method of producing a GaAs single crystal substrate comprises the steps of conducting a first-stage annealing by vacuum-sealing a GaAs single crystal wafer and arsenic in a heat-resistant vessel and heating the wafer to a temperature of 1050.degree. to 1150.degree. C. while exposing it to arsenic vapor pressure, cooling the wafer to room temperature at a cooling rate of 1.degree.-25.degree. C./min., removing the wafer from the vessel, etching the wafer and placing it in another vessel, conducting a second-stage annealing by heating the wafer to a temperature of 910.degree. to 1050.degree. C. in a non-oxidizing atmosphere, cooling the wafer to room temperature at a cooling rate of 1.degree.-25.degree. C./min., removing it from the vessel, etching the wafer, conducting a third-stage annealing by vacuum-sealing the wafer and arsenic in the heat-resistant vessel and heating the wafer to a temperature of 520.degree.-730.degree. C. while exposing it to arsenic vapor, and cooling the wafer at least down to 400.degree. C. at a cooling rate of 15.degree.-30.degree. C./min.

REFERENCES:
patent: 4547256 (1985-10-01), Girtler et al.
patent: 4889493 (1989-12-01), Otsuke et al.
patent: 5047370 (1991-09-01), Yamamoto et al.

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