Method of producing ferroelectric thin film

Details Method of producing ferroelectric thin film Method of producing ferroelectric thin film

1986-09-03

1988-12-20

Childs, Sadie

Coating processes

Electrical product produced

Metallic compound coating

427100, 427255, 4272553, B05D 512, C23C 1640

Patent

active

047924632

ABSTRACT:
Method of producing a ferroelectric thin film by chemical vapor deposition, by providing a gaseous mixture containing oxygen and a gaseous raw material containing (A) alkyl lead and or alkyl bismuth together with an alcoholate of titanium, zirconium, silicon, germanium or niobium, (B) alkyl lead and alkyl germanium, or (C) alkyl bismuth and alkyl lead, and reacting the oxygen and gaseous raw material to oxidize the components of (A), (B) or (C), to form the thin film on the substrate.

REFERENCES:
patent: 3307983 (1967-03-01), De Haan et al.
patent: 4001099 (1977-01-01), Wang et al.
patent: 4478877 (1984-10-01), Krevet et al.
patent: 4510182 (1985-04-01), Cornils et al.
patent: 4514441 (1985-04-01), Alexander
patent: 4591509 (1986-05-01), Krevet et al.
Powell et al., "Vapor Deposition", pp. 283-285 and 301-302 and 384-386, TS 695 P6, 1966.
Nakagawa et al., "Preparation of PbTiO.sub.3 Ferroelectric Thin Film by Chemical Vapour Deposition", Japanese Journal of Applied Physics, vol. 21, No. 10, Oct. 1982, pp. L655-L656.

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