Method of producing ferroelectric capacitor

Details Method of producing ferroelectric capacitor Method of producing ferroelectric capacitor

2007-01-02

2007-01-02

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21208

Reexamination Certificate

active

11105439

ABSTRACT:
A method of producing a ferroelectric capacitor includes the steps of: preparing a semiconductor substrate; forming a first insulating layer on the semiconductor substrate; laminating sequentially a metal layer, a first conductive layer, a ferroelectric layer, and a second conductive layer on the first insulating layer to form a capacitor forming laminated layer; forming an etching mask forming layer with strontium tantalate or strontium niobate; forming a silicon oxide layer on the etching mask forming layer for covering a ferroelectric capacitor forming area; forming an etching mask through wet etching of the etching mask forming layer with the silicon oxide layer; and forming a lamination formed of a barrier metal, a lower electrode, a ferroelectric layer, and an upper electrode through dry etching of the capacitor forming laminated layer with the etching mask.

REFERENCES:
patent: 5532182 (1996-07-01), Woo
patent: 6423592 (2002-07-01), Sun
patent: 6495413 (2002-12-01), Sun et al.
patent: 6753247 (2004-06-01), Okoroanyanwu et al.
patent: 2003/0143853 (2003-07-01), Celii et al.
patent: 2005/0101034 (2005-05-01), Aggarwal et al.

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