Method of producing epitaxial layers of II-VI semiconductors wit

Details Method of producing epitaxial layers of II-VI semiconductors wit Method of producing epitaxial layers of II-VI semiconductors wit

1992-03-16

1993-07-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437247, 437936, 148DIG64, H01L 21324

Patent

active

052273288

ABSTRACT:
Epitaxial layers of II-VI semiconductors in-situ doped with high concentrations of a stable acceptor-type impurity and capped with a diffusion-limiting layer, when subjected to a rapid thermal anneal at a temperature between 700 and 950 degrees C., exhibit a high conversion of the impurities to acceptors, sufficient to render the layers p-type.

REFERENCES:
patent: 4151008 (1979-04-01), Kirkpatrick
patent: 4558509 (1985-12-01), Tiwari
patent: 5068204 (1991-11-01), Kukimoto et al.
B. J. Skromme et al., Rapid Thermal Annealing and Ion Implation of Heteroepitaxial ZnSe/GaAs, Bellcore, MRS Proceedings, 1989, pp. 1-7, FIGS. 1-6.

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