Method of producing element separation structure

Details Method of producing element separation structure Method of producing element separation structure

2008-01-29

2008-01-29

Rose, Kiesha L. (Department: 2809)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Isolation by pn junction only

C438S296000, C438S404000, C438S424000, C438S425000, C438S427000, C438S428000, C257S395000, C257S396000, C257S397000

Reexamination Certificate

active

07323394

ABSTRACT:
A method of producing an element separation structure includes the steps of: forming a first thermal oxide film on the substrate; forming a silicon nitride film on the first thermal oxide film; removing the first thermal oxide film and the silicon nitride film in an element separation structure forming region; forming a groove portion in the element separation structure forming region; forming a groove portion oxide film in the groove portion; forming a pre-filling oxide film for filling the groove portion; removing the pre-filling oxide film; forming a resist layer on the silicon nitride film and the pre-filling oxide film; forming a resist mask on the element separation structure forming region; removing the silicon nitride film and the first thermal oxide film; forming a second thermal oxide film on the substrate; and removing the second thermal oxide film and leveling the pre-filling oxide film to form a filling portion.

REFERENCES:
patent: 6372602 (2002-04-01), Mitsuiki
patent: 6413828 (2002-07-01), Lam
patent: 6417073 (2002-07-01), Watanabe
patent: 6642124 (2003-11-01), Yamauchi
patent: 2002/0056881 (2002-05-01), Ogawa
patent: 2000-323563 (2000-11-01), None
patent: 2001-135720 (2001-05-01), None
patent: 2001-267411 (2001-09-01), None
patent: 2001-267413 (2001-09-01), None

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