Method of producing electronic, electrooptical and optical compo

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat

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117 4, 117 9, 117930, 438766, 438769, 438770, C03B 110

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active

057359490

ABSTRACT:
A buried amorphous layer on a crystalline substrate with a monocrystalline surface layer, which is transformed into a mixed-crystal or chemical compound, avoids the formation of lattice defects at the interface even where the lattice parameters of the substrate and the monocrystalline layer are not matched.

REFERENCES:
patent: 4177084 (1979-12-01), Lau et al.
patent: 4425700 (1984-01-01), Sasaki et al.
patent: 4463492 (1984-08-01), Maeguchi
patent: 4902642 (1990-02-01), Mao et al.
patent: 4975387 (1990-12-01), Prokes et al.
patent: 5047111 (1991-09-01), Ishizaka et al.

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