Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Patent
1991-09-13
1998-04-07
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
117 4, 117 9, 117930, 438766, 438769, 438770, C03B 110
Patent
active
057359490
ABSTRACT:
A buried amorphous layer on a crystalline substrate with a monocrystalline surface layer, which is transformed into a mixed-crystal or chemical compound, avoids the formation of lattice defects at the interface even where the lattice parameters of the substrate and the monocrystalline layer are not matched.
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patent: 4463492 (1984-08-01), Maeguchi
patent: 4902642 (1990-02-01), Mao et al.
patent: 4975387 (1990-12-01), Prokes et al.
patent: 5047111 (1991-09-01), Ishizaka et al.
Butz Rainer
Hollander Bernd
Mantl Siegfried
Dubno Herbert
Forschungszentrum Julich GmbH
Kunemund Robert
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