Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-11-27
2007-11-27
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492230, C250S492300, C438S712000, C716S030000, C716S030000, C430S005000, C430S296000, C430S030000, C700S119000
Reexamination Certificate
active
11082797
ABSTRACT:
A method of producing electron beam writing data in which a figure cell contained in the cell-based device pattern in electron beam lithography of character projection scheme is extracted as a character pattern is disclosed. The method comprises removing an overlap of pattern data included in the figure cell, producing a character pattern cutting frame from a cell allocation frame in the figure cell, assigning a figure inside of the produced character pattern cutting frame to a pattern to be shot in a character projection scheme as a character pattern, defining a figure outside of the character pattern cutting frame as a non-character pattern, removing an overlap between an adjacent pattern and the non-character pattern, and assigning a portion of the non-character pattern, which is not overlapped on the adjacent pattern to a pattern to be shot in a variable shaping beam scheme.
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Notification of Reasons for Rejection issued by the Japanese Patent Office, mailed Jul. 31, 2007, in Japanese Patent Application No. 2004-081366 and English-language translation of Notification.
Berman Jack I.
Hashmi Zia R.
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