Method of producing electrically insulated silicon structure

Details Method of producing electrically insulated silicon structure Method of producing electrically insulated silicon structure

1994-10-31

1996-08-06

Dang, Trung

Fishing, trapping, and vermin destroying

437 62, 437 67, 437 68, H01L 2176

Patent

active

055433510

ABSTRACT:
A silicon substrate comprises at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces of (111) crystal orientation crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and an electrically conductive portion insulated electrically by the electrically insulating layer from an outside of the silicon substrate.

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