Method of producing doped tungsten filaments by ion-implantation

Details Method of producing doped tungsten filaments by ion-implantation Method of producing doped tungsten filaments by ion-implantation

1977-10-13

1978-11-07

Lazarus, Richard B.

Metal working

Barrier layer or semiconductor device making

Barrier layer device making

29 2517, H01K 302

Patent

active

041238338

ABSTRACT:
A method of preparing incandescible tungsten filaments which are doped with a predetermined concentration of selected dopant in order to provide filaments with predetermined characteristics. A beam of high velocity ions of the selected dopant are impinged against a target. The target is made up of a thin layer of finely divided tungsten powder. Dopant ions are implanted into the target layer until a predetermined dopant concentration is attained. The ion-implanted tungsten powder is then processed to form tungsten filaments.

REFERENCES:
patent: 3820868 (1974-06-01), Sell et al.

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