Method of producing defectless epitaxial layer of gallium

Details Method of producing defectless epitaxial layer of gallium Method of producing defectless epitaxial layer of gallium

1974-10-15

1976-10-05

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 156610, 156613, 156614, 357 17, 357 30, H01L 21324, H01L 21205, H01L 3300

Patent

active

039842630

ABSTRACT:
A nitrogen-doped n-type epitaxial layer of GaP grown from a vapor phase is heated at a temperature ranging from 740.degree. to 1000.degree.C for a selected period of time depending on the temperature. The heat treatment is carried out in H.sub.2, N.sub.2 or Ar in the presence of Ga and P vapors. Alternatively, a protection coating of SiO.sub.2, Si.sub.3 N.sub.4 or Al.sub.2 O.sub.3 is formed on the epitaxial layer prior to the heat treatment.

REFERENCES:
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patent: 3508126 (1970-04-01), Newman et al.
patent: 3540941 (1970-11-01), Lorenz et al.
patent: 3687744 (1972-08-01), Ogirima et al.
patent: 3703671 (1972-11-01), Saul
patent: 3725749 (1973-04-01), Groves et al.
patent: 3729348 (1973-04-01), Saul
Logan et al., "Efficient Green . . . GaP p.n Junctions" Applied Physics Letters, vol. 13, No. 4, 15 Aug. 1968, pp. 139-141.
Logan et al., "p.n Junctions in GaP . . . at 25.degree.C".
Ibid., vol. 10, No. 7, 1 Apr. 1967, pp. 206-208.
Saul et al., "Gap Red Electroluminescent . . . of 7%".
Ibid., vol. 15 No. 7, 1 Oct. 1969, pp. 229-231.
Saul, R. H., Defect Structure of GaP . . . Epitaxial Deposition" J. Electrochem. Soc., Solid State Science., vol. 115, No. 11, Nov. 1968, pp. 1184-1190.
Shih et al., "Preparation of . . . Epitaxial Layers of Gap" J. Applied Physics, vol. 39, No. 6, May 1968, pp. 2747-2749.
Gershenzon et al., "Structural Defects in GaP . . . Effects".
Ibid., vol. 35, No. 7, Jly 1964, pp. 2132-2141.
Toyama et al., "Effect of Heat Treatment . . . Diodes" Trans. Metall. Soc. of Aime, vol. 245, Mar. 1969, pp. 551-557.
Chicotka et al., "Improving the Metallurgical Quality of Semiconductors" IBM Tech. Discl. Bull., vol. 13, No. 12, May 1971, pp. 3788-3789.

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