Method of producing defect-free perfect surfaces

Details Method of producing defect-free perfect surfaces Method of producing defect-free perfect surfaces

1993-06-28

1994-11-29

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

Using an energy beam or field, a particle beam or field, or...

437105, 437107, 437133, 437173, H01L 2120

Patent

active

053679806

ABSTRACT:
A basic sample having a surface is set in an ultrahigh vacuum chamber. Atoms constituting the sample are deposited on the surface of the sample to remove vacancy-type defects. A laser beam having a predetermined wavelength and a predetermined fluence is radiated on the sample to remove adatom-type and kink-type defects, thereby producing a defect-free surface. In addition, the same material as that for a basic sample is deposited on a defect-free surface to produce a defect-free thin film.

REFERENCES:
patent: 4959245 (1990-09-01), Dobson et al.
patent: 4962057 (1990-10-01), Epler et al.

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