Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1991-10-29
1993-10-19
Hearn, Brian E.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
361540, 148DIG138, 148DIG93, 437977, B21F 4100
Patent
active
052541371
ABSTRACT:
Disclosed is a method of producing a chip-type solid-electrolyte capacitor, in which the surface of a sheathing resin layer formed on an anode body is roughened by forming an irregularity thereon, and plated metal layers are formed on the surface thus roughened for an anode and cathode use. The metal layers are strongly adhered on the roughened surface. The surface-irregularity of the sheathing resin layer is produced by blasting hard particle material made of, for example, alumina or glass using a sandblast machine, or by irradiating a laser beam such as the YAG laser beam or the like.
REFERENCES:
patent: 3855505 (1974-12-01), Karlik, Jr. et al.
patent: 4093972 (1978-06-01), Voyles
patent: 4561041 (1985-12-01), Crowley, Jr. et al.
patent: 4571664 (1986-02-01), Hyland
patent: 4827328 (1989-05-01), Ozawa et al.
patent: 5036434 (1991-07-01), Kobayashi
patent: 5142452 (1992-08-01), Saiki
Hearn Brian E.
NEC Corporation
Nguyen Tuan
LandOfFree
Method of producing chip-type solid-electrolyte capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing chip-type solid-electrolyte capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing chip-type solid-electrolyte capacitor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1348381