Method of producing bonded wafer

Details Method of producing bonded wafer Method of producing bonded wafer

2011-03-08

2011-03-08

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C257SE21122

Reexamination Certificate

active

07902043

ABSTRACT:
A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including bonded surfaces of the first semiconductor wafer and the second semiconductor wafer have an oxygen concentration of 1.0×1018atoms/cm3(Old ASTM) or less.

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